Effect of SiO2/Al to increase microcantilever infrared detectors sensitivity and compare with Si3N4/Au

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Abstract

In this paper, a high sensitive uncooled microcantilever infrared detector is designed and simulated. The detector consists of absorbing, bi-material and isolator regions, and has two layers suspended structure made of Silicon dioxide (SiO2) and Aluminum (Al) with a 1µm and 200nm thickness, respectively. Absorbing was increased by reflecting IR flux in absorber layer by coting Al under it, and bending of detector was increased by elongating bi-layer legs in absorber layer. Finite element analysis method was used to simulate thermal and mechanical behaviors. Temperature and displacement changes at the end of tip detector (farthest point from the support leg) were 3.651°C and 940nm, correspondingly, at the 100pW/µm2 boundary conditions for constant heat flux on the absorber. In this detector, the calculated heat transfer coefficient, power, temperature, body temperature, displacement and thermo-mechanical sensitivity are 9.7×10-3, 667.2mW-1, 32.8K/(pW.µm-2), 2.75nm/K, 9.34nm/(pW.µm-2) and 284nm/K, respectively. Those parameters are improved 16, 41, 17, 41, 41 and 2.38 times compared to the same Si3N4/Au detector.

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