Atomistic Analysis of 4H-SiC/Titanium Nanoscale Friction Behavior under the Effects of Normal Load and Temperature Using Molecular Dynamics

Authors

1 Department of Mechanical Engineering, Arak University of Technology, Arak 38181-41167, Iran

2 Mech. Eng., Arak UT, Arak, Iran

10.22044/jsfm.2026.17449.4043

Abstract

In this study, the frictional behavior of the contact between silicon carbide and titanium is investigated using molecular dynamics simulation. To model the system, rectangular blocks of 4H-SiC and titanium are constructed, and the interatomic interactions are described using the Tersoff, embedded atom method (EAM), and Lennard–Jones potentials. The simulation procedure involves the application of a normal load followed by the sliding motion of the titanium block over the SiC surface, and the coefficient of friction is calculated as the ratio of the averaged friction force to the applied normal force. The effects of normal load and temperature on the coefficient of friction are systematically analyzed. The results indicate that increasing the applied normal load leads to a reduction in the coefficient of friction, while variations in temperature result in a linear yet stable frictional behavior throughout the simulation. This study provides atomistic insight into the SiC–Ti contact and contributes to a deeper understanding of the mechanisms governing friction at the nanoscale, with potential implications for the design and optimization of advanced tribological systems.

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Journal of Solid and Fluid Mechanics
Volume 16, Issue 3
July and August 2026
Pages 271-281

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